schottky barrier diode rb520s-30 ? applications ? dimensions (unit : mm) ? land size figure (unit : mm) low current rectification ? features 1) ultra small mold type. (emd2) 2) low i r . 3) high reliability. ? construction silicon epitaxial planar ? structure ? taping specifications (unit : mm) ? absolute maximum ratings (ta=25c) symbol unit v r v io ma i fsm a tj c tstg c ? electrical characteristics (ta=25c) symbol min. typ. max. unit v f - - 0.6 v i f =200ma i r --1 a v r =10v parameter limits reverse voltage (dc) 30 average rectified forward current 200 forward current surge peak (60hz ? 1cyc) 1 conditions junction temperature 125 storage temperature -40 to +125 forward voltage reverse current parameter emd2 0.8 1.7 0.6 0.120.05 0.60.1 0.30.05 0.80.05 1.20.05 1.60.1 rohm : emd2 jeita : sc-79 jedec :sod-523 dot (year week factory) 0.950.06 0 4.00.1 4.00.1 2.00.05 1.50.05 3.50.05 1.750.1 8.00.15 0.20.05 0.760.05 1.260.05 0 0.5 0.6 2.00.05 1.30.06 0 2.450.1 ??? 0.2 1.55 0.05 2.40 0.05 0.90 0.05 0.75 0.05 1.25 ? 0.06 ? 0 1.25 ? 0. 06 ? 0 empty pocket 1/3 2011.03 - rev.d data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
rb520s-30 10 100 1000 10000 0.001 0.1 10 1000 rth(j-a) rth(j-c) 0 100 200 300 400 500 600 700 800 900 1000 1 10 100 0 102030 forward voltagevf(mv) vf-if characteristics forward current:if(ma) 0 0.1 0.2 0.3 0 0.10.20.30.40.5 reverse current:ir(na) reverse voltagevr(v) vr-ir characteristics capacitance between terminals:ct(pf) reverse voltage:vr(v) vr-ct characteristics vf dispersion map forward voltage:vf(mv) reverse current:ir(na) ir dispersion map capacitance between terminals:ct(pf) ct dispersion map 0 5 10 15 20 25 30 35 40 45 50 ave:28.2pf ta=25 f=1mhz vr=0v n=10pcs ifsm disresion map peak surge forward current:ifsm(a) peak surge forward current:ifsm(a) number of cycles ifsm-cycle characteristics peak surge forward current:ifsm(a) time:t(ms) ifsm-t characteristics 0 5 10 15 20 25 30 ave:5.60a 8.3ms ifsm 1cyc 0 5 10 110100 8.3ms ifsm 1cyc 8.3ms 0 5 10 11 01 0 0 t ifsm 0.001 0.01 0.1 1 10 100 1000 0 100 200 300 400 500 600 time:t(s) rth-t characteristics transient thaermal impedance:rth (/w) forward power dissipation:pf(w) average rectified forward currentio(a) io-pf characteristics reverse power dissipation:p r (w) reverse voltage:vr(v) vr-p r characteristics 1 10 100 1000 10000 100000 1000000 0 102030 ta=125 ta=75 ta=25 ta=-25 f=1mh 0 0.002 0.004 0.006 0.008 0.01 0 5 10 15 20 25 30 dc d=1/2 sin( 180) 480 490 500 510 520 530 ave:507.6mv ta=25 if=200ma n=30pcs ta=125 ta=-25 ta=25 ta=75 ta=25 vr=10v n=30pcs ave:114na dc d=1/2 sin(?180) 1ms im=10ma if=100ma 300us time mounted on epoxy board 2/3 2011.03 - rev.d www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
rb520s-30 average rectified forward current:io(a) case temparature:tc() derating curve (io-tc) 0 0.1 0.2 0.3 0.4 0.5 0255075100125 sin(?180) dc d=1/2 t tj=125 d=t/t t vr io vr=15v 0a 0v ambient temperature:ta() derating curve (io-ta) average rectifide forward current:io(a) 0 0.1 0.2 0.3 0.4 0.5 0 25 50 75 100 125 sin(?180) dc d=1/2 t tj=125 d=t/t t vr io vr=15v 0 a 0v 3/3 2011.03 - rev.d www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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